Responsibilities/职位责任：
1. Work with the Research and Design (R&D) center team to develop temperature control models for 300mm/200mm RTP (Rapid Thermal Process) system.
协同其他研发团队成员，以及工艺工程师开发300mm/200mm 快速热退火设备温度测量和控制系统；
2. Develop temperature measurement systems from high to low temperature, detection with difference wafer optical property and robust systems for new annealing, oxidation/nitridation, plasma oxidation/nitridation, application.
开发不同温度范围的温度测量，控制系统，能够满足硅氧化膜，氮化膜和多晶硅等不同膜的温度精确测量和控制；
3. Develop wafer mode for cross wafer tuning and CIP development to meet process requirements.
根据工艺要求，研发晶圆不同半径区域内可调节的温度控制系统，以及对现有工艺的持续改善；
4. Support customers to solve problems related to temperature measurement, process optimization, as long as new product development.
为客户提供关于温控部件，工艺优化，新产品开发等相关的技术解决方案；
5. Overseas training.
不定期的海外技术培训。

Requirements/职位要求：
1. At least MS in Optoelectronic Information Science and Engineering. PhD is preferred.
光电信息与工程相关专业，硕士以上学历；
2. Quick learner with the ability to grasp things quickly, is passionate about developing new systems.
有兴趣从事半导体设备研发工作，并且有能力学习技术前沿知识；
3. Demonstrated research experience, in a technical environment, with strong trouble-shooting skills.
具有较强的技术研究能力，数据分析总结能力；具有较强的分析问题解决问题的能力；
4. Excellent English communication skills (verbal, written), data analysis and coding skills.
较强的英语听说读写能力；
5. Must be able to work independently under pressure in a highly dynamic environment.
具有较强的工作抗压能力；
6. RTP background in research development center is preferred.
具有快速热退火相关知识，相关技术背景者优先。

Notes：面向2024届及2025届毕业生。