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Senior Principal Design Engineer
4-5万
人 · 无需经验 · 性别不限2024/09/12发布

闻天下创新中心

公司信息
安世半导体(中国)有限公司

外资(欧美)/10000人以上

该公司所有职位
职位描述
POSITION OVERVIEW:
The experienced candidate with suitable skills is required to carry out key tasks and to meet the deadline of the project. The successful candidate will work with high power chip technology development team to design and develop state-of-the-art technology and deliver world-class high-power chips on the market.
KEY RESPONSIBILITIES:
61Responsible to build technology platform for power device (IGBT/FRD) design and new technology development to meet customer requirement in a manufacturable and cost-effective way
61Responsible to improve the device overall performance for the existing products, in particular, to improve the device reliability and robustness
61Performing TCAD process and device simulations, and layout design
61Creating and maintaining design rules and generation rules when required using controlled procedures
61Responsible for engineering device test (static, dynamic, reliability, etc) and data analysis, part of manually testing might be involved
61Responsible to guide and work with chip and other function teams to meet timely deliveries
61Train and advance the skills of existing technical employees to expand their capability and responsibility
61Experience of IGBT design for EV/HEV application preferred
61Encourage and manage the process of producing technical publications and invention patents.
SKILLS/COMPETENCIES
(Top 3-7 most important/critical competencies needed for the job both soft and hard skills):
Hard Skills:
61Hand-on experience in power device design and technology development, fine geometry trench and thin wafer technology are necessary, 12” experience is a plus
61Proficiency in TCAD process and device simulation
61Understanding of power device physics, fabrication and characterization principles.
61Knowledge and experience in design for reliability and robustness of power devices.
61Ability to address design and engineering issues and to provide suitable solutions
61More than 8 years working experience in IGBT (or FRD) design and/or processing
61Proficient in reading English literature and writing in English
Soft Skills:
61Leadership skills in building and leading project teams in a global, intercultural environment– “exemplified engagement”.
61Master’s degree or above, major in Microelectronics or semiconductor related
61Good Communication skills in both oral and written English
Talent acquisition based on Nexperia vacancies is not appreciated. Nexperia job adverts are Nexperia copyright
© material and the word Nexperia® is a registered trademark.
Nexperia is an Equal Opportunity/Affirmative Action Employer.
职位要求:
Same as above.
个人信息处理规则声明
Nexperia高度重视对求职者个人信息的保护。为招聘目的,Nexperia及其委托的第三方机构会通过招聘平台获取求职者的求职意向和简历,并将以邮件或短信等方式联系求职者,以征求您对Nexperia与招聘相关的个人信息保护政策的同意。敬请您留意相关邮件或短信。如您对我们的相关个人信息处理规则有任何疑问,或希望查阅、复制、转移、更正、补充或删除其个人信息的,均可通过我们在个人信息保护政策中留下的方式联系我们。为保障个人信息安全,我们可能会先要求验证您的身份,再处理相关请求。
请您仔细阅读并确认您已经充分理解本声明的内容,在确认充分理解并同意后再向我们提供您的简历信息或其他个人信息。如您向我们提供您的简历信息或其他个人信息的,则视为您已经充分理解并同意我们可以按照本声明所述的目的和方式以及Nexperia与招聘相关的个人信息保护政策处理您的个人信息(包括敏感个人信息)。如您对此有任何疑问或者不同意,请勿提交简历信息或其他个人信息。

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