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DRAM电路设计工程师 I DRAM Circuit Design Engineer
2.5-5万·15薪
人 · 本科 · 3年及以上工作经验 · 性别不限2024/09/19发布

长鑫存储技术有限公司-东大门

公司信息
长鑫存储技术有限公司

民营/1000-5000人

该公司所有职位
职位描述
工作职责:
Responsibilities:
1.Evaluate and optimize memory architecture and methodology in cutting-edge technology;
2.Design full custom circuits of IPs used in memory products;
3.Simulate, verify and analyze memory functionality and performance;
4.Oversee the layout and verification process includes floor-planning, placement& routing, DRC/LVS;
5.Provide support to Product Engineering for silicon debug.
任职资格:
Requirements:
1.8years+ DRAM circuit design experience is a must requirement;
2.Experience in LPDDR4 DRAM product design and verification would be a plus;
3.Deep knowledge and understanding of digital/analog circuits and CMOS device physics;
4.Familiar with EDA design tools such as Spectre, finesim, Hspice, Virtuoso, Calibre etc.;
5.Experience in mix-signal circuitry design and verification including circuitry implementation, timing analysis and optimization;
6.Good team player and communication skills;
7.Good learning competency, self-motivated in a flexible and dynamic environment;
8.Experience in ASIC design background such as RTL coding, STA etc would be plus.

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